2N5303 Description
High power, NPN, TO-3, Silicon Transistor Designed for use in power amplifier and switching circuits applications Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C) Derate Above 25°C Operating Junction Temperature Range, Storage Temperature Range Symbol VCBO VCEO lC IB PD TJ Tstg Rating 80 20 7.5 200 1.14...
2N5303 Key Features
- High Collector Sustaining Voltage :VCEO = 80V @ IC = 200mA
- Low Collector Emitter saturation Voltage VCE(sat) 1V @ IC = 10A