| Part Number | 2N5303 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5301/D High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitt. ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ. |
2N5303 Datasheet and Specifications PDF
The 2N5303 is a POWER TRANSISTORS.
| Part Number | 2N5303 Datasheet |
|---|---|
| Description | Bipolar Transistor |
| Manufacturer | Multicomp |
| Overview |
High power, NPN, TO-3, Silicon Transistor Designed for use in power amplifier and switching circuits applications
Maximum Ratings:
Characteristic Collector-Base Voltage Collector-Emitter Voltage Con.
* High Collector Sustaining Voltage :VCEO = 80V @ IC = 200mA * Low Collector Emitter saturation Voltage VCE(sat) 1V @ IC = 10A 2 Base 1 Emitter Description: High power, NPN, TO-3, Silicon Transistor Designed for use in power amplifier and switching circuits applications Maximum Ratings: Charac. |
| Part Number | 2N5303 Datasheet |
|---|---|
| Description | Bipolar NPN Device |
| Manufacturer | Seme LAB |
| Overview | 2N5303 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.. . |
| Part Number | 2N5303 Datasheet |
|---|---|
| Description | NPN SILICON POWER TRANSISTOR |
| Manufacturer | SSDI |
| Overview | . . |