Part 2N5303
Description SILICON NPN Transistor
Category Transistor
Manufacturer Toshiba
Size 106.70 KB
Toshiba

2N5303 Overview

Key Features

  • High Collector-Emitter Sustaining Voltage: VCEO(SUS)=80V (Min.) @ I C=200mA, I B=0
  • Specification for hpg and VcE(sat) Up to 20A: hFE=5.0 (Min.) @ VCE=4.0V, I C=20A vCE(sat) =2 -0V (Max.) @ I C=20A, I B=4.0A
  • Low Saturation Voltage: VcE(sat)=0-75V (Max.) @ Ic=10A, I B=1.0A vBE(sat)=l-7V (Max.) @ I C=10A, IB=1.0A
  • High Collector Power Dissipation Capability: PC=200W (Max.)