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2N5303 Datasheet Silicon NPN Transistor

Manufacturer: Toshiba

Overview: : SILICON NPN TRIPLE DIFFUSED TYPE , 2N5303 HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in.

2N5303 datasheet preview

Datasheet Details

Part number	2N5303
Manufacturer	Toshiba
File Size	106.70 KB
Description	SILICON NPN Transistor
Datasheet	2N5303-Toshiba.pdf

Key Features

. High Collector-Emitter Sustaining Voltage: VCEO(SUS)=80V (Min. ) @ I C=200mA, I B=0 . Specification for hpg and VcE(sat) Up to 20A: hFE=5.0 (Min. ) @ VCE=4.0V, I C=20A vCE(sat) =2 -0V (Max. ) @ I C=20A, I B=4.0A . Low Saturation Voltage: VcE(sat)=0-75V (Max. ) @ Ic=10A, I B=1.0A vBE(sat)=l-7V (Max. ) @ I C=10A, IB=1.0A . High Collector Power Dissipation Capability: PC=200W (Max. ).

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