2N5303
2N5303 is SILICON NPN Transistor manufactured by Toshiba.
:
SILICON NPN TRIPLE DIFFUSED TYPE
,
HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS
Unit in mm
Features
. High Collector-Emitter Sustaining Voltage:
VCEO(SUS)=80V (Min.) @ I C=200mA, I B=0 . Specification for hpg and VcE(sat) Up to 20A: hFE=5.0 (Min.) @ VCE=4.0V, I C=20A vCE(sat) =2 -0V (Max.) @ I C=20A, I B=4.0A . Low Saturation Voltage:
VcE(sat)=0-75V (Max.) @ Ic=10A, I B=1.0A vBE(sat)=l-7V (Max.)
@ I C=10A, IB=1.0A
. High Collector Power Dissipation Capability:
PC=200W (Max.)
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Sustaining Voltage Emitter-Base Voltage
Collector Current
DC Peak
Base...
