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2N5303 - SILICON NPN Transistor

Key Features

  • . High Collector-Emitter Sustaining Voltage: VCEO(SUS)=80V (Min. ) @ I C=200mA, I B=0 . Specification for hpg and VcE(sat) Up to 20A: hFE=5.0 (Min. ) @ VCE=4.0V, I C=20A vCE(sat) =2 -0V (Max. ) @ I C=20A, I B=4.0A . Low Saturation Voltage: VcE(sat)=0-75V (Max. ) @ Ic=10A, I B=1.0A vBE(sat)=l-7V (Max. ) @ I C=10A, IB=1.0A . High Collector Power Dissipation Capability: PC=200W (Max. ).

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Datasheet Details

Part number 2N5303
Manufacturer Toshiba
File Size 106.70 KB
Description SILICON NPN Transistor
Datasheet download datasheet 2N5303 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN TRIPLE DIFFUSED TYPE , 2N5303 HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in mm FEATURES . High Collector-Emitter Sustaining Voltage: VCEO(SUS)=80V (Min.) @ I C=200mA, I B=0 . Specification for hpg and VcE(sat) Up to 20A: hFE=5.0 (Min.) @ VCE=4.0V, I C=20A vCE(sat) =2 -0V (Max.) @ I C=20A, I B=4.0A . Low Saturation Voltage: VcE(sat)=0-75V (Max.) @ Ic=10A, I B=1.0A vBE(sat)=l-7V (Max.) @ I C=10A, IB=1.0A . High Collector Power Dissipation Capability: PC=200W (Max.