Part 2N5302
Description SILICON NPN Transistor
Category Transistor
Manufacturer Toshiba
Size 111.07 KB
Toshiba

2N5302 Overview

Key Features

  • Specification for hFE and V CE ( sat ) Up to 30A: hFE=5.0 (Min.) @ VCE=4.0V, I C=30A v CE(sat) =3 - ov (Max.) @ I C =30A, I B =1.0A
  • Low Saturation Voltage: vCE(sat)=0-75V (Max.) @ IC=10A, Ib=1.0A v CE(sat)=l-7V (Max.) @ I C =10A, Ib=1.0A
  • High Collector Power Dissipation Capability: PC=200W (Max.)