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2N5302 - SILICON NPN Transistor

Key Features

  • . Specification for hFE and V CE ( sat ) Up to 30A: hFE=5.0 (Min. ) @ VCE=4.0V, I C=30A v CE(sat) =3 - ov (Max. ) @ I C =30A, I B =1.0A . Low Saturation Voltage: vCE(sat)=0-75V (Max. ) @ IC=10A, Ib=1.0A v CE(sat)=l-7V (Max. ) @ I C =10A, Ib=1.0A . High Collector Power Dissipation Capability: PC=200W (Max. ) . Complementary to 2N4399 1. BASE 2.

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Datasheet Details

Part number 2N5302
Manufacturer Toshiba
File Size 111.07 KB
Description SILICON NPN Transistor
Datasheet download datasheet 2N5302 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: 2N5302 3 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in mm FEATURES . Specification for hFE and V CE ( sat ) Up to 30A: hFE=5.0 (Min.) @ VCE=4.0V, I C=30A v CE(sat) =3 - ov (Max.) @ I C =30A, I B =1.0A . Low Saturation Voltage: vCE(sat)=0-75V (Max.) @ IC=10A, Ib=1.0A v CE(sat)=l-7V (Max.) @ I C =10A, Ib=1.0A . High Collector Power Dissipation Capability: PC=200W (Max.) . Complementary to 2N4399 1. BASE 2. EMITTER COLLECTOR (CASE) JEDEC EIAJ TO—2 4MA/TO—3 TC-3, TB— 2-21D1A MAXIMUM RATINGS (Ta=25°c) Weight : 12.