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2N5302 Datasheet Silicon NPN Transistor

Manufacturer: Toshiba

Overview: : 2N5302 3 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in.

2N5302 datasheet preview

Datasheet Details

Part number	2N5302
Manufacturer	Toshiba
File Size	111.07 KB
Description	SILICON NPN Transistor
Datasheet	2N5302-Toshiba.pdf

Key Features

. Specification for hFE and V CE ( sat ) Up to 30A: hFE=5.0 (Min. ) @ VCE=4.0V, I C=30A v CE(sat) =3 - ov (Max. ) @ I C =30A, I B =1.0A . Low Saturation Voltage: vCE(sat)=0-75V (Max. ) @ IC=10A, Ib=1.0A v CE(sat)=l-7V (Max. ) @ I C =10A, Ib=1.0A . High Collector Power Dissipation Capability: PC=200W (Max. ) . Complementary to 2N4399 1. BASE 2.

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