2N5302
2N5302 is SILICON NPN Transistor manufactured by Toshiba.
:
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS
Unit in mm
Features
. Specification for hFE and V CE ( sat ) Up to 30A: hFE=5.0 (Min.) @ VCE=4.0V, I C=30A v CE(sat) =3
- ov (Max.) @ I C =30A, I B =1.0A
. Low Saturation Voltage: vCE(sat)=0-75V (Max.) @ IC=10A, Ib=1.0A v CE(sat)=l-7V (Max.) @ I C =10A, Ib=1.0A . High Collector Power Dissipation Capability:
PC=200W (Max.)
. plementary to 2N4399
1. BASE 2. EMITTER
COLLECTOR (CASE)
JEDEC EIAJ
TO- 2 4MA/TO- 3 TC-3, TB-
2-21D1A
MAXIMUM RATINGS (Ta=25°c)
Weight : 12. 6g
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Sustaining...
