| Part Number | 2N5302 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
2N5302 High−Power NPN Silicon Transistor
High−power NPN silicon transistors are for use in power amplifier and switching circuits applications.
Features
• Low Collector−Emitter Satu.
* Low Collector *Emitter Saturation Voltage * ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ . |
2N5302 Datasheet and Specifications PDF
The 2N5302 is a POWER TRANSISTORS.
| Part Number | 2N5302 Datasheet |
|---|---|
| Description | NPN HIGH POWER SILICON TRANSISTOR |
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices 2N5302 2N5303 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-B. rrent 2N5302 2N5303 VCE = 60 Vdc 2N5302 VCE = 80 Vdc 2N5303 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 2N5302 2N5303 60 80 60 80 5.0 30 20 7.5 5.0 115 -65 to +200 Max. 0.875 Symbol V(BR)CEO ICEO IEBO ICEX ICBO Unit Vdc Vdc Vdc Adc Adc. |
| Part Number | 2N5302 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage- : VCE(sat)= 0.75V(Max.)@ IC= 10A ·Wide Area of Safe Operation ·Complement to Type 2N4399 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device perf. ademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A VCE(sat)-2 Collector-Emitter Satu. |
| Part Number | 2N5302 Datasheet |
|---|---|
| Description | NPN SILICON POWER TRANSISTOR |
| Manufacturer | SSDI |
| Overview | . . |