2N5302 - NPN HIGH POWER SILICON TRANSISTOR

Microsemi

Datasheet Details

Part number	2N5302
Manufacturer	Microsemi
File Size	56.54 KB
Description	NPN HIGH POWER SILICON TRANSISTOR
Datasheet	2N5302 Datasheet
Additional preview pages of the 2N5302 datasheet.

📁 Similar Datasheet

2N5302 - POWER TRANSISTORS (ON Semiconductor)
2N5302 - NPN SILICON POWER TRANSISTOR (SSDI)
2N5302 - Bipolar NPN Device (Seme LAB)
2N5302 - NPN Transistor (INCHANGE)
2N5302 - SILICON NPN Transistor (Toshiba)
2N5301 - POWER TRANSISTORS (ON Semiconductor)
2N5301 - Bipolar NPN Device (Seme LAB)
2N5301 - Silicon NPN Power Transistors (Inchange Semiconductor)
2N5301 - NPN SILICON POWER TRANSISTOR (SSDI)
2N5301 - Bipolar Transistor (Multicomp)

Other Datasheets by Microsemi

2N5303 - NPN HIGH POWER SILICON TRANSISTOR
2N5339U3 - NPN POWER SILICON SWITCHING TRANSISTOR
2N5003 - PNP POWER SILICON TRANSISTOR
2N5005 - PNP POWER SILICON TRANSISTOR
2N5038 - NPN HIGH POWER SILICON TRANSISTOR
2N5039 - NPN HIGH POWER SILICON TRANSISTOR
2N5084 - NPN Transistor
2N5114 - P-Channel J-FET

Full PDF Text Transcription

Click to expand full text

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices 2N5302 2N5303 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 28.57 mW/0C for TA = +250C 2) Derate linearly 1.

Published: May 16, 2017 |