2N5302 Description
0.875 Symbol V(BR)CEO ICEO IEBO ICEX ICBO Unit Vdc Vdc Vdc Adc Adc W W/0C 0C Unit 0C/W TO-3 (TO-204AA) See appendix A for package outline Min. IC = 15 Adc 2N5302 VCE = 2.0 Vdc; IC = 10 Adc 2N5303 VBE VCE = 4.0 Vdc;.
2N5302 is NPN HIGH POWER SILICON TRANSISTOR manufactured by Microsemi .
| Manufacturer | Part Number | Description |
|---|---|---|
| 2N5302 | POWER TRANSISTORS | |
SSDI |
2N5302 | NPN SILICON POWER TRANSISTOR |
Seme LAB |
2N5302 | Bipolar NPN Device |
Inchange Semiconductor |
2N5302 | NPN Transistor |
Toshiba |
2N5302 | SILICON NPN Transistor |
0.875 Symbol V(BR)CEO ICEO IEBO ICEX ICBO Unit Vdc Vdc Vdc Adc Adc W W/0C 0C Unit 0C/W TO-3 (TO-204AA) See appendix A for package outline Min. IC = 15 Adc 2N5302 VCE = 2.0 Vdc; IC = 10 Adc 2N5303 VBE VCE = 4.0 Vdc;.