| Part number | 2N5302 |
|---|---|
| Download | 2N5302 Datasheet (PDF) |
| File Size | 192.39 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
2N5302 | POWER TRANSISTORS |
SSDI |
2N5302 | NPN SILICON POWER TRANSISTOR |
Seme LAB |
2N5302 | Bipolar NPN Device |
Microsemi |
2N5302 | NPN HIGH POWER SILICON TRANSISTOR |
Toshiba |
2N5302 | SILICON NPN Transistor |
·Low Collector Saturation Voltage- : VCE(sat)= 0.75V(Max.)@ IC= 10A ·Wide Area of Safe Operation ·plement to Type 2N4399 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in power amplifier and switching circuits applications.
