2N5302 Description
2N5302 High−Power NPN Silicon Transistor High−power NPN silicon transistors are for use in power amplifier and switching circuits applications.
2N5302 Key Features
- Low Collector-Emitter Saturation Voltage
- ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ Î
- Continuous (Note 2) Base Current Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction T
- 65 to + 200
- VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc Pb-Free Package is Available
- For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering