Microsemi 2N5303
NPN HIGH POWER SILICON TRANSISTOR
| Part No. | 2N5303 |
|---|---|
| Datasheet | 2N5303 Download |
| Manufacturer |  Microsemi |
| Description | NPN HIGH POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 28.57 mW/0C for TA = +250C 2) Derate linearly 1.14 W/0C for TC = +1000C Symbol VCEO VCBO VEBO IC IB PT TJ, Tstg Symbol RθJCELECTRICAL CHARACTERISTICS
Characteristics OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 200 mAdc, IB = 0 2N5302 2N5303 Collector-Emitter Cutoff Current VCE = 60 Vdc, IB = 0 2N5302 VCE = 80 Vdc, IB = 0 Emitter-Base Cutoff Current 2N5303 VEB = 5.0 Vdc, IC = 0 Collector-Emitter Cutoff Current VBE = 1.5 Vdc, VCE = 60 Vdc VBE = 1.5 Vdc, VCE = 80 Vdc Collector-Emitter Cutoff Current 2N5302 2N5303 VCE = 60 Vdc 2N5302 VCE = 80 Vdc 2N5303 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 2N5302 2N5303 60 80 60 80 5.0 30 20 7.5 5.0 115 -65 to +200 Max.