2N5303 - NPN HIGH POWER SILICON TRANSISTOR

This page provides the datasheet information for the 2N5303, a member of the 2N5302 NPN HIGH POWER SILICON TRANSISTOR family.

Microsemi

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Datasheet Details

Part number	2N5303
Manufacturer	Microsemi
File Size	56.54 KB
Description	NPN HIGH POWER SILICON TRANSISTOR
Datasheet	2N5303 Datasheet
Additional preview pages of the 2N5303 datasheet.

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Full PDF Text Transcription

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices 2N5302 2N5303 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 28.57 mW/0C for TA = +250C 2) Derate linearly 1.

Published: May 16, 2017 |