2N5303 Datasheet PDF

FEATURES

:
● High Collector Sustaining Voltage :VCEO = 80V @ IC = 200mA
● Low Collector Emitter saturation Voltage VCE(sat) 1V @ IC = 10A 2 Base 1 Emitter

DESCRIPTION

: High power, NPN, TO-3, Silicon Transistor Designed for use in power amplifier and switching circuits applications

MAXIMUM RATINGS

: Characteristic Collector-Base Voltage Collector-Emitter Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C) Derate Above 25°C Operating Junction Temperature Range, Storage Temperature Range Symbol VCBO VCEO lC IB PD TJ Tstg Rating 80 20 7.5 200 1.14 -65 to +200 Unit V A W mW/°C °C Page <1> 23/04/13 V1.0 Bipolar Transistor

ELECTRICAL CHARACTERISTICS

(TA = +25°C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON Characteristics ( See Note 1) DC Current G