2N5303 - Bipolar Transistor

Multicomp

General Description

High power, NPN, TO-3, Silicon Transistor Designed for use in power amplifier and switching circuits applications Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C) Derate Above 25°C Oper

Key Features

High Collector Sustaining Voltage :VCEO = 80V @ IC = 200mA.
Low Collector Emitter saturation Voltage VCE(sat) 1V @ IC = 10A 2 Base 1 Emitter.

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2N5303 bipolar transistor by Multicomp - Datasheet Preview

Datasheet Details

Part number	2N5303
Manufacturer	Multicomp
File Size	191.10 KB
Description	Bipolar Transistor
Datasheet	2N5303 Datasheet

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Bipolar Transistor NPN Collector 3 Features: • High Collector Sustaining Voltage :VCEO = 80V @ IC = 200mA • Low Collector Emitter saturation Voltage VCE(sat) 1V @ IC = 10A 2 Base 1 Emitter Description: High power, NPN, TO-3, Silicon Transistor Designed for use in power amplifier and switching circuits applications Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C) Derate Above 25°C Operating Junction Temperature Range, Storage Temperature Range Symbol VCBO VCEO lC IB PD TJ Tstg Rating 80 20 7.5 200 1.14 -65 to +200 Unit V A W mW/°C °C www.element14.com www.farnell.com www.newark.com Page <1> 23/04/13 V1.