2N5301 Overview
Description
High Power TO-3, NPN, Silicon Transistor Designed for use in power amplifier and switching circuits applications Characteristic Collector-Base Voltage Collector-Emitter Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C) Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO lC IB PD TJ Tstg Rating 40 30 7.5 200 1.14 -65 to +200 Unit V A W mW/°C °C Page <1> 23/04/13 V1.0 Bipolar Transistor Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON Characteristics DC Current Gain (N.
Key Features
- High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA
- Low Collector Emitter saturation Voltage VCE(sat) 0.75V @ IC = 10A NPN Collector 3 2 Base 1 Emitter
