2N5301 Overview
High Power TO-3, NPN, Silicon Transistor Designed for use in power amplifier and switching circuits applications Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C) Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO lC IB PD TJ Tstg Rating 40 30 7.5 200 1.14 -65...
2N5301 Key Features
- High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA
- Low Collector Emitter saturation Voltage VCE(sat) 0.75V @ IC = 10A
