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2N5301 - Bipolar Transistor

General Description

High Power TO-3, NPN, Silicon Transistor Designed for use in power amplifier and switching circuits applications Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C) Derate Above 25°C Opera

Key Features

  •   High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA.
  •   Low Collector Emitter saturation Voltage VCE(sat) 0.75V @ IC = 10A NPN Collector 3 2 Base 1 Emitter.

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Datasheet Details

Part number 2N5301
Manufacturer Multicomp
File Size 192.09 KB
Description Bipolar Transistor
Datasheet download datasheet 2N5301 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistor Features: •  High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA •  Low Collector Emitter saturation Voltage VCE(sat) 0.75V @ IC = 10A NPN Collector 3 2 Base 1 Emitter Description: High Power TO-3, NPN, Silicon Transistor Designed for use in power amplifier and switching circuits applications Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C) Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO lC IB PD TJ Tstg Rating 40 30 7.5 200 1.14 -65 to +200 Unit V A W mW/°C °C www.element14.com www.farnell.com www.newark.com Page <1> 23/04/13 V1.