| Part Number | 2N5301 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5301/D High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitt. ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ. |
2N5301 Datasheet and Specifications PDF
The 2N5301 is a POWER TRANSISTORS.
| Part Number | 2N5301 Datasheet |
|---|---|
| Description | Bipolar Transistor |
| Manufacturer | Multicomp |
| Overview |
High Power TO-3, NPN, Silicon Transistor Designed for use in power amplifier and switching circuits applications
Maximum Ratings:
Characteristic Collector-Base Voltage Collector-Emitter Voltage Cont.
* High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA * Low Collector Emitter saturation Voltage VCE(sat) 0.75V @ IC = 10A NPN Collector 3 2 Base 1 Emitter Description: High Power TO-3, NPN, Silicon Transistor Designed for use in power amplifier and switching circuits application. |
| Part Number | 2N5301 Datasheet |
|---|---|
| Description | Bipolar NPN Device |
| Manufacturer | Seme LAB |
| Overview | 2N5301 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.. otice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co. |
| Part Number | 2N5301 Datasheet |
|---|---|
| Description | NPN SILICON POWER TRANSISTOR |
| Manufacturer | SSDI |
| Overview | . . |