2N5301 - SILICON NPN Transistor

Toshiba

Key Features

. Specification for h^g an& vCE(sat) Up to 30A: hFE=5.0 (Min. ) @ V CE=4.0V, I C=30A VCE(sat)=3.0V (Max. ) @ Ic=30A, I B=6A . Low Saturation Voltage: VcE(sat)=0.75V (Max. ) VBE(sat)=l-7V (Max. ) @ I C=10A, I B =1.0A @ Ic=10A, Ib=1.0A . High Collector Power Dissipation Capability: PC =200W (Max. ) . Complementary to 2N4398 1. BASE 2.

2N5301 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2N5301
Manufacturer	Toshiba
File Size	112.61 KB
Description	SILICON NPN Transistor
Datasheet	2N5301 Datasheet

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Full PDF Text Transcription (Reference)

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: SILICON NPN TRIPLE DIFFUSED TYPE 3 2N5301 HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in mm FEATURES . Specification for h^g an& vCE(sat) Up to 30A: hFE=5.0 (Min.) @ V CE=4.0V, I C=30A VCE(sat)=3.0V (Max.) @ Ic=30A, I B=6A . Low Saturation Voltage: VcE(sat)=0.75V (Max.) VBE(sat)=l-7V (Max.) @ I C=10A, I B =1.0A @ Ic=10A, Ib=1.0A . High Collector Power Dissipation Capability: PC =200W (Max.) . Complementary to 2N4398 1. BASE 2. EMITTER COLLECTOR (CASE) JEDEC EIAJ TOSHIBA TO—2 4MA/T0-3 TC-3, TB— 2-21D1A Weight : 12.