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2N5301 - SILICON NPN Transistor

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Toshiba

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2N5301 SILICON NPN Transistor by Toshiba - Datasheet Preview — Datasheet preview – 2N5301

Datasheet Details

Part number	2N5301
Manufacturer	Toshiba
File Size	112.61 KB
Description	SILICON NPN Transistor
Datasheet	2N5301 Datasheet
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Features

. Specification for h^g an& vCE(sat) Up to 30A: hFE=5.0 (Min. ) @ V CE=4.0V, I C=30A VCE(sat)=3.0V (Max. ) @ Ic=30A, I B=6A . Low Saturation Voltage: VcE(sat)=0.75V (Max. ) VBE(sat)=l-7V (Max. ) @ I C=10A, I B =1.0A @ Ic=10A, Ib=1.0A . High Collector Power Dissipation Capability: PC =200W (Max. ) . Complementary to 2N4398 1. BASE 2.

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Published: Aug 12, 2024 |