Part 2N5301
Description SILICON NPN Transistor
Category Transistor
Manufacturer Toshiba
Size 112.61 KB
Toshiba

2N5301 Overview

Key Features

  • Specification for h^g an& vCE(sat) Up to 30A: hFE=5.0 (Min.) @ V CE=4.0V, I C=30A VCE(sat)=3.0V (Max.) @ Ic=30A, I B=6A
  • Low Saturation Voltage: VcE(sat)=0.75V (Max.) VBE(sat)=l-7V (Max.) @ I C=10A, I B =1.0A @ Ic=10A, Ib=1.0A
  • High Collector Power Dissipation Capability: PC =200W (Max.)
  • Complementary to 2N4398 - BASE - EMITTER COLLECTOR (CASE) JEDEC EIAJ TOSHIBA TO-2 4MA/T0-3 TC-3, TB- 2-21D1A Weight : - 6g