2N5301
2N5301 is SILICON NPN Transistor manufactured by Toshiba.
:
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS
Unit in mm
Features
. Specification for h^g an& vCE(sat) Up to 30A: hFE=5.0 (Min.) @ V CE=4.0V, I C=30A VCE(sat)=3.0V (Max.) @ Ic=30A, I B=6A
. Low Saturation Voltage:
VcE(sat)=0.75V (Max.) VBE(sat)=l-7V (Max.)
@ I C=10A, I B =1.0A @ Ic=10A, Ib=1.0A
. High Collector Power Dissipation Capability:
PC =200W (Max.) . plementary to 2N4398
1. BASE 2. EMITTER
COLLECTOR (CASE)
JEDEC EIAJ TOSHIBA
TO- 2 4MA/T0-3 TC-3, TB- 2-21D1A
Weight : 12. 6g
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Sustaining Voltage...
