Datasheet Details
| Part number | 2N6499 |
|---|---|
| Manufacturer | Multicomp |
| File Size | 205.80 KB |
| Description | Bipolar Transistor |
| Download | 2N6499 Download (PDF) |
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Overview: Bipolar Transistor.
| Part number | 2N6499 |
|---|---|
| Manufacturer | Multicomp |
| File Size | 205.80 KB |
| Description | Bipolar Transistor |
| Download | 2N6499 Download (PDF) |
|
|
|
: A Silicon NPN transistor in a T0-220 type package designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.
This device is particularly suited for 115V and 220V switch-mode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits Maximum Ratings: Characteristic Collector-Emitter Voltage Collector-Base Voltage Collector Current - Continuous - Peak Base Current - Continuous - Peak Total Power Dissipation (TC = +25°C), Derate Above 25°C Operating Junction Temperature Storage Temperature Range Thermal Resistance, Junction-to-case Lead Temperature (During Soldering, ⅛" from case, 5 sec) Symbol VCEO(sus) VCBO lC lB PD TJ Tstg Rthjc TL Rating 350 6 5 10 2 12 80 640 -65 to +150 1.56 +275 Unit V A W mW/°C °C °C/W °C www.element14.com www.farnell.com www.newark.com Page <1> 29/04/13 V1.0 Bipolar Transistor Electrical Characteristics (TA = 25°C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics (Note 1) Collector - Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 1) DC Current Gain Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Dynamic Characteristics VCEO(sus) ICEV IEBO hFE VCE(sat) VBE(sat) IC = 25mA, IB = 0 VCEV = 450V, VBE(off) = 1.5V VCEV = 225V, VBE(off) = 1.5V TC = 100° VEB = 6V, IC = 0 VCE - 10V, IC = 2.5A VCE - 10V, IC = 5A IC = 2.5A, IB = .5A IC = 5A, IB = 2A IC = 2.5A, IB = 0.5A IC = 5A, IB = 2A Current Gain - Bandwidth Product fT Output Capacitance Cob Switching Characteristics (Resistive Load) VCE - 10V, IC = 250mA, f = 1MHz VCB - 10V, IE = 0, f = 0.1MHz Note 1 : Pulse test : -Pulse width = 5ms, duty cycle
Typ 350 ---- 10 3----- 5- 150 Max.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6499 | Silicon NPN Power Transistors | INCHANGE |
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2N6499 | Silicon NPN Power Transistors | SavantIC |
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2N6499 | SILICON NPN POWER TRANSISTORS | Central Semiconductor |
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|---|---|
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