BC107B Overview
Key Specifications
Description
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate Above 25°C Power Dissipation at Tc = 25°C Derate Above 25°C Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg BC107 BC108 BC109 UNIT 45 25 25 V 50 30 30 V 6.0 5.0 5.0 V 0.2 A 0.6 W.
Key Features
- NPN Silicon Planar Epitaxial Transistors
- Suitable for applications requiring low noise and good hFE linearity, eg
- audio pre-amplifiers, and instrumentation
- TO-18 Metal Can Package
