Multicomp BU941
Silicon NPN Power Transistor
FEATURES
:● High Voltage
● Darlington
APPLICATIONS
: High ruggedness electronic ignitions High voltage ignition coil driver Pin 1. Base 2. Emitter 3. Collector (Case) TO-3 mm Dimensions Minimum Maximum A 39 B 25.3 26.67 C 7.8 8.3 D 0.9 1.1 E 1.4 1.6 G 10.92 H 5.46 K 11.4 13.5 L 16.75 17.05 N 19.4 19.62 Q 4 4.2 U 30 30.2 V 4.3 4.5 Dimensions : MillimetresABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Symbol VCBO VCEO Parameter Collector - base voltage Collector - emitter voltage Value 500 400 Unit V V Page <1> 12/12/11 V1.1 Silicon NPN Power TransistorABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Symbol Parameter VEBO IC ICM IB IBM PC Tj Tstg Emitter - base voltage Collector current - continuous Collector current - peak Base current Base current - peak Collector power dissipation at TC = 25°C Junction temperature Storage temperature range Value 5 15 30 1 5 180 200 -65 to 200 Thermal Cha