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Multicomp

MJ2501 Datasheet Preview

MJ2501 Datasheet

Medium-power complementary Silicon Transistors

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MJ2501 & MJ3001
10A, 150W, 80V
Features:
Medium-power complementary Silicon Transistors for use as output devices in
complementary general purpose amplifier applications.
High DC Current Gain
hFE = 1000 (Typical) at IC = 5.0A.
Monolithic construction with built Base-Emitter Shunt Resistors.
Pin 1. Base
2. Emitter
Collector(Case)
Dimensions
A
B
C
D
E
F
G
H
I
J
K
Minimum
Maximum
38.75
19.28
7.96
11.18
25.20
0.92
1.38
29.90
16.64
3.88
10.57
39.96
22.23
9.28
12.19
26.67
1.09
1.62
30.40
17.30
4.36
11.16
Dimensions : Millimetres
PNP NPN
MJ2501 MJ3001
10 Ampere
Darlington
Power Transistors
Complementary Silicon
80 Volts
150 Watts
TO-3
Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
Base Current
Total Power Dissipation at TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO
VCEX
VEBO
IC
IB
PD
TJ, TSTG
MJ2501/MJ3001
80
5.0
10
12
0.2
150
0.857
-55 to +200
Unit
V
A
W
W/°C
°C
Page 1
31/05/05 V1.0




Multicomp

MJ2501 Datasheet Preview

MJ2501 Datasheet

Medium-power complementary Silicon Transistors

No Preview Available !

MJ2501 & MJ3001
10A, 150W, 80V
Thermal Characteristics
Characteristic
Symbol
Thermal Resistance Junction to Case
Rθjc
Figure - 1 Power Derating
Maximum
1.17
Unit
°C/W
TC, Temperature(°C)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Minimum
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC = 200mA, IB = 0)
MJ2501, MJ3001
Collector Cut off Current
(VCE = 80V, RBE = 1.0k)
(VCE = 80V, RBE = 1.0k, TC = 150°C) MJ2501, MJ3001
Emitter Cut off Current
(VEB = 5.0V, IC = 0)
Collector Cut off Current
(VCE = 40V, IB = 0)
MJ2501, MJ3001
ON Characteristics
DC Current Gain
(IC = 5.0A, VCE = 3.0V)
Collector-Emitter Saturation Voltage
(IC = 5.0A, IB = 20mA)
(IC = 10A, IB = 50mA)
Base - Emitter On Voltage
(IC = 5.0A, VCE = 3.0V)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%
VCEO(sus)
ICER
IEBO
ICER
hFE
VCE(sat)
VBE(sat)
80
-
-
-
1000
-
-
Maximum
-
1.0
5.0
2.0
1.0
-
2.0
4.0
3.0
Unit
V
mA
-
V
Page 2
31/05/05 V1.0


Part Number MJ2501
Description Medium-power complementary Silicon Transistors
Maker Multicomp
PDF Download

MJ2501 Datasheet PDF






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