Part MJ2501
Description PNP Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 202.06 KB
Inchange Semiconductor
MJ2501

Overview

Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 1000 (Min) @ IC = -5A Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation.