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MJ2501

Manufacturer: Inchange Semiconductor

MJ2501 datasheet by Inchange Semiconductor.

MJ2501 datasheet preview

MJ2501 Datasheet Details

Part number MJ2501
Datasheet MJ2501-INCHANGE.pdf
File Size 202.06 KB
Manufacturer Inchange Semiconductor
Description PNP Transistor
MJ2501 page 2

MJ2501 Overview

·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC = -5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in plementary general purpose amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Darlingtion Power Transistor...

MJ2501 from other manufacturers

View MJ2501 datasheet index

Brand Logo Part Number Description Other Manufacturers
ST Microelectronics Logo MJ2501 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ST Microelectronics
Multicomp Logo MJ2501 Medium-power complementary Silicon Transistors Multicomp
SavantIC Logo MJ2501 (MJ2500 / MJ2501) SILICON POWER TRANSISTOR SavantIC
Comset Semiconductors Logo MJ2501 (MJ2500 / MJ2501) COMPLEMENTARY POWER DARLINGTONS Comset Semiconductors
DIGITRON Logo MJ2501 PNP Transistor DIGITRON
Inchange Semiconductor logo - Manufacturer

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