Datasheet Summary
isc Silicon PNP Darlingtion Power Transistor
DESCRIPTION
- Built-in Base-Emitter Shunt Resistors
- High DC current gain- hFE = 1000 (Min) @ IC = -5A
- Collector-Emitter Breakdown Voltage-
V(BR)CEO= -80V(Min)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use as output devices in plementary general purpose amplifier...
