Datasheet Details
| Part number | MJ2501 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.06 KB |
| Description | PNP Transistor |
| Datasheet | MJ2501-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlingtion Power Transistor.
| Part number | MJ2501 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.06 KB |
| Description | PNP Transistor |
| Datasheet | MJ2501-INCHANGE.pdf |
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·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC = -5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in plementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -10 A IB Base Current -0.2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.17 ℃/W MJ2501 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MJ2501 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | ST Microelectronics |
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MJ2501 | Medium-power complementary Silicon Transistors | Multicomp |
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MJ2501 | (MJ2500 / MJ2501) SILICON POWER TRANSISTOR | SavantIC |
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MJ2501 | (MJ2500 / MJ2501) COMPLEMENTARY POWER DARLINGTONS | Comset Semiconductors |
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MJ2501 | PNP Transistor | DIGITRON |
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|---|---|
| MJ2500 | PNP Transistor |
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| MJ21194 | NPN Transistor |
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