MJ2501
Overview
- Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications.
- High DC Current Gain hFE = 1000 (Typical) at IC = 5.0A.
- Monolithic construction with built Base-Emitter Shunt Resistors. Pin
- Emitter Collector(Case) Dimensions A B C
- E F G H I J K Minimum Maximum
- 75 19.28 7.96 11.18 25.20 0.92 1.38 29.90 16.64 3.88 10.57
- 96 22.23 9.28 12.19 26.67 1.09 1.62 30.40 17.30 4.36 11.16 Dimensions : Millimetres
