| Part Number | MJ2501 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC = -5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Minimum Lot-to-Lot variations for robust device per. ECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -50mA VBE(on) B. |