MJ2501 Datasheet

The MJ2501 is a PNP Transistor.

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Part NumberMJ2501
ManufacturerInchange Semiconductor
Overview ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC = -5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Minimum Lot-to-Lot variations for robust device per. ECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -50mA VBE(on) B.
Part NumberMJ2501
DescriptionSilicon complementary trasistors
ManufacturerCentral Semiconductor
Overview . .
Part NumberMJ2501
Description(MJ2500 / MJ2501) COMPLEMENTARY POWER DARLINGTONS
ManufacturerComset Semiconductors
Overview PNP MJ2500 – MJ2501 COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal . w.DataSheet4U.net/ PNP MJ2500
* MJ2501 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol BVCEO Ratings Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Test Condition(s) IC=-100mA IB=0 VCE=-30 V IB=0 VCE=-40 V IB=0 VBE=-5.0 V IC=0 VCB=-60 V RBE=1.0 kΩ VCB=-80 V RBE.
Part NumberMJ2501
DescriptionPNP Transistor
ManufacturerDIGITRON
Overview MJ2500-MJ2501-PNP MJ3000-MJ3001-NPN High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS FEATURES • Available as “HR” (high reli.
* Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
* Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Collector-Emitter voltage Collector-Base voltage Emitter-Base voltage C.