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MJ2501 & MJ3001
10A, 150W, 80V
Features:
• Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications.
• High DC Current Gain hFE = 1000 (Typical) at IC = 5.0A.
• Monolithic construction with built Base-Emitter Shunt Resistors.
Pin 1. Base 2. Emitter Collector(Case)
Dimensions
A B C D E F G H I J K
Minimum
Maximum
38.75 19.28 7.96 11.18 25.20 0.92 1.38 29.90 16.64 3.88 10.57
39.96 22.23 9.28 12.19 26.67 1.09 1.62 30.40 17.30 4.36 11.