Multicomp MJ3001
Medium-power complementary Silicon Transistors
| Part No. | MJ3001 |
|---|---|
| Datasheet | MJ3001 Download |
| Manufacturer |  Multicomp |
| Description | Medium-power complementary Silicon Transistors |
| Buy | Stock & Price |
FEATURES
:● Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications.
● High DC Current Gain hFE = 1000 (Typical) at IC = 5.0A.
● Monolithic construction with built Base-Emitter Shunt Resistors. Pin 1. Base 2. Emitter Collector(Case) Dimensions A B C D E F G H I J K Minimum Maximum 38.75 19.28 7.96 11.18 25.20 0.92 1.38 29.90 16.64 3.88 10.57 39.96 22.23 9.28 12.19 26.67 1.09 1.62 30.40 17.30 4.36 11.16 Dimensions : Millimetres PNP NPN MJ2501 MJ3001 10 Ampere Darlington Power Transistors Complementary Silicon 80 Volts 150 Watts TO-3
MAXIMUM RATINGS
Characteristic Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous -Peak Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCEX VEBO IC IB PD TJ, TSTG MJ2501/MJ3001 80 5.0 10 12 0.2 150 0.857 -55
