| Part Number | MJ3001 Datasheet |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ2500/2501 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) . . |
MJ3001 Datasheet and Specifications PDF
The MJ3001 is a Silicon NPN Power Transistors.
| Part Number | MJ3001 Datasheet |
|---|---|
| Description | Silicon complementary trasistors |
| Manufacturer | Central Semiconductor |
| Overview | . . |
| Part Number | MJ3001 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC = 5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) ·Complement to PNP type MJ2501 ·Minimum Lot-to-Lot var. INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor MJ3001 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA V. |
| Part Number | MJ3001 Datasheet |
|---|---|
| Description | Medium-power complementary Silicon Transistors |
| Manufacturer | Multicomp |
| Overview |
MJ2501 & MJ3001
10A, 150W, 80V
Features:
• Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications.
• High DC Current Gain hFE .
* Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications. * High DC Current Gain hFE = 1000 (Typical) at IC = 5.0A. * Monolithic construction with built Base-Emitter Shunt Resistors. Pin 1. Base 2. Emitter Collector(Case) D. |