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MJ3001 - NPN Transistor

General Description

Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 1000 (Min) @ IC = 5A Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) Complement to PNP type MJ2501 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor MJ3001 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC = 5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) ·Complement to PNP type MJ2501 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 10 A IB Base Current 0.