MJ3001 Overview
Description
Built-in Base-Emitter Shunt Resistors - High DC current gain- hFE = 1000 (Min) @ IC = 5A - Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) - Complement to PNP type MJ2501 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.