Datasheet Details
| Part number | MJ3001 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.79 KB |
| Description | NPN Transistor |
| Datasheet | MJ3001-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor.
| Part number | MJ3001 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.79 KB |
| Description | NPN Transistor |
| Datasheet | MJ3001-INCHANGE.pdf |
|
|
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·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC = 5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) ·plement to PNP type MJ2501 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in plementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 10 A IB Base Current 0.2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.17 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor MJ3001 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MJ3001 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | Motorola |
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MJ3001 | Silicon NPN Power Transistors | SavantIC |
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MJ3001 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | ST Microelectronics |
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MJ3001 | NPN Transistor | Comset Semiconductors |
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MJ3001 | NPN Transistor | DIGITRON |
| Part Number | Description |
|---|---|
| MJ3000 | NPN Transistor |
| MJ3041 | NPN Transistor |