Datasheet Details
| Part number | MJ3000 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.51 KB |
| Description | NPN Transistor |
| Datasheet | MJ3000-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlingtion Power Transistor.
| Part number | MJ3000 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.51 KB |
| Description | NPN Transistor |
| Datasheet | MJ3000-INCHANGE.pdf |
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·Built-in Base-Emitter Shunt Resistors ·High DC current gain hFE = 1000 (Min) @ IC = 5A ·Collector-Emitter Breakdown Voltage V(BR)CEO= 60V(Min) ·plement to PNP type MJ2500 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in plementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 10 A IB Base Current 0.2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.17 ℃/W MJ3000 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MJ3000 | 10 AMPERE DARLINGTON POWER TRANSISTORS | Motorola |
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MJ3000 | Bipolar NPN Device | Semelab PLC |
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MJ3000 | Complementary Silicon Power Darlington Transistors | ST Microelectronics |
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MJ3000 | Silicon NPN Power Transistors | SavantIC |
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MJ3000 | (MJ3000 / MJ3001) COMPLEMENTARY POWER DARLINGTONS | Comset Semiconductors |
| Part Number | Description |
|---|---|
| MJ3001 | NPN Transistor |
| MJ3041 | NPN Transistor |