MJ3000 Overview
·Built-in Base-Emitter Shunt Resistors ·High DC current gain hFE = 1000 (Min) @ IC = 5A ·Collector-Emitter Breakdown Voltage V(BR)CEO= 60V(Min) ·plement to PNP type MJ2500 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in plementary general purpose amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN...
