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Multicomp

MMST5401 Datasheet Preview

MMST5401 Datasheet

PNP General Purpose Transistor

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PNP General Purpose Transistor
Features:
•  Epitaxial planar die construction.
•  Complementary NPN type available (MMST5551).
•  Also available in lead free version.
Applications:
•  Ideal for medium power amplification and switching.
1
Base
Collector
3
PNP
2
Emitter
Maximum Rating @ Ta = 25°C unless otherwise specified
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Thermal resistance ,Junction to ambient
Junction and Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj,Tstg
Value
-160
-150
-5
-0.6
0.2
625
-55 to 150
Electrical Characteristics @ Ta = 25°C unless otherwise specified
Parameter
Symbol
Collector-Base Breakdown Voltage V(BR)CBO
Collector-Emitter Breakdown Voltage V(BR)CEO
Emitter-Base Breakdown Voltage
V(BR)EBO
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
DC Current Gain
hFE
Test conditions
IC = -100μA, IE = 0
IC = -1mA, IB = 0
IE = -10μA, IC = 0
IE = 0; VCB = -120V
IC = 0; VEB = -3V
VCE = -5V; IC = -1mA
VCE = -5V; IC = -10mA
VCE = -5V; IC = -50 mA
Collector-Emitter Saturation Voltage VCE(sat)
IC = -50 mA; IB = -5mA
IC = -10mA; IB = -1mA
Base-Emitter Saturation Voltage
Transition Frequency
Noise Figure
VBE(sat)
fT
NF
IC = -50mA; IB = -5mA
IC = -10mA; IB = -1mA
IC = -10mA; VCE = -10V,
f = 100MHz
IC = -200mA, VCE = -5V,
f = 100MHz
www.element14.com
www.farnell.com
www.newark.com
Page <1>
SOT-323
Units
V
A
W
°C/W
°C
MIN.
-160
-150
-5
-
50
60
50
-
100
MAX.
-50
-50
-
240
-
-0.5
-0.2
-1
-1
300
UNIT
nA
V
MHz
8 dB
12/09/14 V1.0




Multicomp

MMST5401 Datasheet Preview

MMST5401 Datasheet

PNP General Purpose Transistor

No Preview Available !

PNP General Purpose Transistor
Typical Characteristics @ Ta = 25°C unless otherwise specified
www.element14.com
www.farnell.com
www.newark.com
Page <2>
12/09/14 V1.0


Part Number MMST5401
Description PNP General Purpose Transistor
Maker Multicomp
Total Page 3 Pages
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