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NT5SV8M16FS - 128Mb Synchronous DRAM

Description

The NT5SV8M16FS, and NT5SV8M16FT are four-bank Synchronous DRAMs organized as 2Mbit x 16 I/O x 4 Bank.

These synchronous devices achieve high-speed data transfer rates of up to 166MHz by employing a pipeline chip architecture that synchronizes the output data to a system clock.

Features

  • High Performance: Maximum Operating Speed CAS Latency 2 3 PC166 (6K/6KI) 7.5 6 PC133 (75B/75BI) 10 7.5 ns ns.
  • Single Pulsed RAS Interface Fully Synchronous to Positive Clock Edge Four Banks controlled by BA0/BA1 (Bank Select) Programmable CAS Latency: 2, 3 Programmable Burst Length: 1, 2, 4, 8 or full page.
  • Program.

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Datasheet preview – NT5SV8M16FS

Datasheet Details

Part number NT5SV8M16FS
Manufacturer NANYA
File Size 2.76 MB
Description 128Mb Synchronous DRAM
Datasheet download datasheet NT5SV8M16FS Datasheet
Additional preview pages of the NT5SV8M16FS datasheet.

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Full PDF Text Transcription

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NT5SV8M16FS / NT5SV8M16FT 128Mb Synchronous DRAM Features • High Performance: Maximum Operating Speed CAS Latency 2 3 PC166 (6K/6KI) 7.5 6 PC133 (75B/75BI) 10 7.5 ns ns • • • • • Single Pulsed RAS Interface Fully Synchronous to Positive Clock Edge Four Banks controlled by BA0/BA1 (Bank Select) Programmable CAS Latency: 2, 3 Programmable Burst Length: 1, 2, 4, 8 or full page • • • • • • • • • • • • Programmable Wrap: Sequential or Interleave Multiple Burst Read with Single Write Option Automatic and Controlled Precharge Command Dual Data Mask for byte control (x16) Auto Refresh (CBR) and Self Refresh Suspend Mode and Power Down Mode Standard Power operation Random Column Address every CK (1-N Rule) Single Power Supply, either 3.
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