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NCE60H21 - NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE60H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =60V ,ID =210A RDS(ON) < 4mΩ @ VGS=10V Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet preview – NCE60H21

Datasheet Details

Part number NCE60H21
Manufacturer NCE Power
File Size 382.72 KB
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE60H21 Datasheet
Additional preview pages of the NCE60H21 datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE60H21 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE60H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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