Part NCE6005S
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer NCE Power
Size 374.07 KB
NCE Power

NCE6005S Overview

Description

The NCE6005S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Key Features

  • VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V (Typ:38mΩ) - High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Low gate to drain charge to reduce switching losses