Datasheet Details
| Part number | NCE6005S |
|---|---|
| Manufacturer | NCE Power |
| File Size | 374.07 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE6005S Datasheet
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General Description
The NCE6005S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） Schematic diagram.
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Low gate to drain charge to reduce switching losses.