NCE6003M Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature - VDS =60V,ID =3.0A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V - High Power and current handing capability - Lead free product is acquired - Surface mount package Application - Battery switch - DC/DC converter S Schematic diagram SOT-89 -3L top view Package Marking and Ordering Information Device Marking Device Device...