NCE6003M Overview
The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application.
NCE6003M datasheet by NCE Power Semiconductor.
| Part number | NCE6003M |
|---|---|
| Datasheet | NCE6003M-NCEPowerSemiconductor.pdf |
| File Size | 248.98 KB |
| Manufacturer | NCE Power Semiconductor |
| Description | N-Channel Enhancement Mode Power MOSFET |
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The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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NCE6003 | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
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