Part NCE6003M
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer NCE Power Semiconductor
Size 248.98 KB
NCE Power Semiconductor

NCE6003M Overview

Description

The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application.

Key Features

  • VDS =60V,ID =3.0A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface mount package