NCE6003M - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other switching application.

VDS =60V,ID =3.0A RDS(ON)

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NCE6003M n-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE6003M
Manufacturer	NCE Power Semiconductor
File Size	248.98 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE6003M Datasheet

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http://www.ncepower.com Pb Free Product NCE6003M NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =60V,ID =3.0A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.