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NCE6005S - Dual N-Channel MOSFET

Key Features

  • TrenchFET® power MOSFET.
  • 100 % Rg and UIS tested D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET.

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Datasheet Details

Part number NCE6005S
Manufacturer VBsemi
File Size 234.98 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet NCE6005S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NCE6005S-VB www.VBsemi.com NCE6005S-VB Datasheet Dual N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) per leg Configuration SO-8 Dual D2 D2 5 D1 6 D1 7 8 60 0.028 0.030 7 Dual 4 3 G2 2 S2 1 G1 S1 Top View FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.