| Part Number | NCE6005S Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
NCE6005S-VB
NCE6005S-VB Datasheet
Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A) per leg
Configuration
SO.
* TrenchFET® power MOSFET * 100 % Rg and UIS tested D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduct. |
NCE6005S Datasheet and Specifications PDF
The NCE6005S is a Dual N-Channel MOSFET.
| Part Number | NCE6005S Datasheet |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Manufacturer | NCE Power |
| Overview |
The NCE6005S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =60V,ID =4.5A RDS(O.
* VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） Schematic diagram * High density cell design for ultra low Rdson * Fully characterized avalanche voltage and current * Low gate to drain charge to reduce switching losses Application * Power switching application * Hard switched and high fr. |