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NCE6003Y - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE6003Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other switching application.

Key Features

  • VDS =60V,ID =3A RDS(ON).

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Datasheet Details

Part number NCE6003Y
Manufacturer NCE Power Semiconductor
File Size 272.19 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE6003Y Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com Pb Free Product NCE6003Y NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6003Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.