Part NCE6003Y
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer NCE Power Semiconductor
Size 272.19 KB
NCE Power Semiconductor

NCE6003Y Overview

Description

The NCE6003Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application.

Key Features

  • VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package D G S Marking and Pin Assignment