NCE6003X - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE6003X uses advanced trench technology to provide excellent RDS(ON), low gate charge.

This device is suitable for use as a Battery protection or in other switching application.

Key Features

Schematic Diagram.
VDS =60V,ID =3A RDS(ON).

📥 Download Datasheet

NCE6003X n-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE6003X
Manufacturer	NCE Power Semiconductor
File Size	708.17 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE6003X Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
NCE6003	NCE N-Channel Enhancement Mode Power MOSFET	NCE Power
NCE6005AS	Dual N-Channel MOSFET	VBsemi
NCE6005R	NCE N-Channel Enhancement Mode Power MOSFET	NCE Power
NCE6005S	N-Channel Enhancement Mode Power MOSFET	NCE Power
NCE6005S	Dual N-Channel MOSFET	VBsemi

Other Datasheets by NCE Power Semiconductor

Part Number	Description
NCE6003XY	N-Channel Enhancement Mode Power MOSFET
NCE6003M	N-Channel Enhancement Mode Power MOSFET
NCE6003Y	N-Channel Enhancement Mode Power MOSFET
NCE6005AR	N-Channel Enhancement Mode Power MOSFET
NCE6005AS	N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

http://www.ncepower.com NCE6003X NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6003X uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. D G S General Features Schematic Diagram ● VDS =60V,ID =3A RDS(ON) <78mΩ @ VGS=10V RDS(ON) < 96mΩ @ VGS=4.