Datasheet Summary
http://.ncepower.
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6003X uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application.
General Features
Schematic Diagram
- VDS =60V,ID =3A
RDS(ON) <78mΩ @ VGS=10V RDS(ON) < 96mΩ @ VGS=4.5V
- High power and current handing capability
- Lead free product is acquired
Only
- Surface mount package
Application
UseMarking and Pin Assignment
- Battery switch
- DC/DC converter times
SOT-23 Top View
Package Marking and Ordering Information ng Device Marking e 6003X
Device NCE6003X
Device Package...
