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NCE6003XY - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE6003XY uses advanced trench technology to provide excellent RDS(ON), low gate charge.

This device is suitable for use as a Battery protection or in other switching application.

Key Features

  • Schematic Diagram.
  • VDS =60V,ID =3A RDS(ON).

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Datasheet Details

Part number NCE6003XY
Manufacturer NCE Power Semiconductor
File Size 779.42 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE6003XY Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com NCE6003XY NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE6003XY uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. G S General Features Schematic Diagram ● VDS =60V,ID =3A RDS(ON) <78mΩ @ VGS=10V RDS(ON) < 96mΩ @ VGS=4.