Datasheet Summary
http://.ncepower.
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6003XY uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application.
General Features
Schematic Diagram
- VDS =60V,ID =3A RDS(ON) <78mΩ @ VGS=10V RDS(ON) < 96mΩ @ VGS=4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
Application
- Battery switch
- DC/DC converter
Only
UseMarking and Pin Assignment times
SOT-23-3L Top View g Package Marking and Ordering Information n Device Marking
Device
Device Package e...
