Part NCE6003XY
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer NCE Power Semiconductor
Size 779.42 KB
NCE Power Semiconductor

NCE6003XY Overview

Description

The NCE6003XY uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application.

Key Features

  • VDS =60V,ID =3A RDS(ON) <78mΩ @ VGS=10V RDS(ON) < 96mΩ @ VGS=4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package