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NCE6007S - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =60V,ID =7A RDS(ON) < 30mΩ @ VGS=10V （Typ：24mΩ） RDS(ON) < 35mΩ @ VGS=4.5V （Typ：27mΩ）.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Low gate to drain charge to reduce switching losses Schematic diagram.

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Datasheet Details

Part number NCE6007S
Manufacturer NCE Power Semiconductor
File Size 412.44 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE6007S Datasheet

Full PDF Text Transcription for NCE6007S (Reference)

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http://www.ncepower.com Pb Free Product NCE6007S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6007S uses advanced trench technology and design to provid...

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tion The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =7A RDS(ON) < 30mΩ @ VGS=10V （Typ：24mΩ） RDS(ON) < 35mΩ @ VGS=4.

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