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NCE Power

NCE75H21 Datasheet Preview

NCE75H21 Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCE75H21
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE75H21 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be
used in Automotive applications and a wide variety of other
applications.
General Features
VDSS =75V,ID =210A
RDS(ON) < 4m@ VGS=10V
Schematic diagram
Good stability and uniformity with high EAS
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE75H21
NCE75H21
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Limit
75
±20
210
150
840
310
2.07
Unit
V
V
A
A
A
W
W/
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.2




NCE Power

NCE75H21 Datasheet Preview

NCE75H21 Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE75H21
Single pulse avalanche energy (Note 4)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
2200
-55 To 175
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 1)
RθJC
0.48 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=75V,VGS=0V
75
V
1 μA
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
±200
nA
On Characteristics
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
23
4
V
25
Drain-Source On-State Resistance
125
RDS(ON)
VGS=10V, ID=40A
2.8 4
4.7 6.5
m
m
Forward Transconductance
gFS
VDS=25V,ID=40A
100 165
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
11000
914
695
PF
PF
PF
Switching Characteristics
Turn-on Delay Time
td(on)
23 nS
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
190
130
nS
nS
Turn-Off Fall Time
tf
120 nS
Total Gate Charge
Gate-Source Charge
Qg - 250
Qgs ID=30A,VDD=30V,VGS=10V -
48
nC
nC
Gate-Drain Charge
Qgd
- 98
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
VSD VGS=0V,IS=40A
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = 25°C, IF = 40A
Qrr di/dt = 100A/μs(Note2)
63
98
nS
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Surface Mounted on FR4 Board, t 10 sec.
2. Pulse Test: Pulse Width 400μs, Duty Cycle 2%.
3. EAS conditionTj=25,VDD=37.5V,VG=10V,L=2mH,Rg=25,IAS=37A
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.2


Part Number NCE75H21
Description NCE N-Channel Enhancement Mode Power MOSFET
Maker NCE Power
Total Page 7 Pages
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