Datasheet Summary
NCE75H21TB-VB
NCE75H21TB-VB Datasheet N-Channel 80 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
0.0028 at VGS = 10 V 80
0.0030 at VGS = 7.5 V
ID (A) 215 205
Qg (TYP.) 94
TO-247AC
S D G Top View
N-Channel MOSFET
Features
- TrenchFET® power MOSFET
- Maximum 175 °C junction temperature
- Very low Qgd reduces power loss from passing through Vplateau
- 100 % Rg and UIS tested
APPLICATIONS
- Power supply
- Secondary synchronous rectification
- DC/DC converter
- Power tools
- Motor drive switch
- DC/AC inverter
- Battery...
