NCE75H21TB Overview
NCE75H21TB-VB NCE75H21TB-VB Datasheet N-Channel 80 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.0028 at VGS = 10 V 80 0.0030 at VGS = 7.5 V ID (A) 215 205 Qg (TYP.) 94 TO-247AC S D G Top View D G S N-Channel MOSFET.
NCE75H21TB Key Features
- TrenchFET® power MOSFET
- Maximum 175 °C junction temperature
- Very low Qgd reduces power loss from passing
- 100 % Rg and UIS tested
