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NCE75H21T - NCE N-Channel Enhancement Mode Power MOSFET

General Description

The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in Automotive applications and a wide variety of other applications.

Key Features

  • VDSS =75V,ID =210A RDS(ON) < 4mΩ @ VGS=10V Schematic diagram.
  • Good stability and uniformity with high EAS.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation.

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Datasheet Details

Part number NCE75H21T
Manufacturer NCE Power
File Size 453.00 KB
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE75H21T Datasheet

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Full PDF Text Transcription for NCE75H21T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE75H21T. For precise diagrams, tables, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE75H21T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21T uses advanced trench technology and design to prov...

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ption The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications.