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NCE Power

NCE75H21T Datasheet Preview

NCE75H21T Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCE75H21T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE75H21T uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in Automotive applications and a wide variety of other
applications.
General Features
VDSS =75V,ID =210A
RDS(ON) < 4m@ VGS=10V
Schematic diagram
Good stability and uniformity with high EAS
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE75H21T
NCE75H21T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100)
IDM
PD
Single pulse avalanche energy (Note 4)
EAS
Limit
75
±20
210
150
840
330
2.2
2200
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.2




NCE Power

NCE75H21T Datasheet Preview

NCE75H21T Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE75H21T
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 175
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 1)
RθJC
0.455
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=75V,VGS=0V
VGS=±20V,VDS=0V
75
1
±200
V
μA
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
23
4
V
25
Drain-Source On-State Resistance
125
RDS(ON)
VGS=10V, ID=40A
2.9 4
4.7 6.5
m
m
Forward Transconductance
Dynamic Characteristics
gFS
VDS=25V,ID=40A
100 165
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
11000
914
695
PF
PF
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
ID=30A,VDD=30V,VGS=10V
-
-
-
23
190
130
120
250
48
98
nS
nS
nS
nS
nC
nC
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=40A
trr TJ = 25°C, IF = 40A
Qrr di/dt = 100A/μs(Note2)
1.2
48
78
V
nS
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Surface Mounted on FR4 Board, t 10 sec.
2. Pulse Test: Pulse Width 400μs, Duty Cycle 2%.
3. EAS conditionTj=25,VDD=37.5V,VG=10V,L=0.5mH,Rg=25,IAS=37A
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.2


Part Number NCE75H21T
Description NCE N-Channel Enhancement Mode Power MOSFET
Maker NCE Power
Total Page 7 Pages
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