NCE75H21T Description
The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications.
NCE75H21T Key Features
- VDSS =75V,ID =210A RDS(ON) < 4mΩ @ VGS=10V
- Good stability and uniformity with high EAS
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
- Automotive