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NCE Power
NCE Power

NCE80H11D Datasheet Preview

NCE80H11D Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

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NCE80H11D pdf
http://www.ncepower.com
Pb Free Product
NCE80H11D
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE80H11D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
VDS =80V,ID =105A
RDS(ON) < 8m@ VGS=10V (Typ:6.3m)
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-263-2L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE80H11D
NCE80H11D
TO-263-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100)
IDM
PD
Single pulse avalanche energy (Note 5)
EAS
Limit
80
±20
105
80
420
200
1.33
800
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0



NCE Power
NCE Power

NCE80H11D Datasheet Preview

NCE80H11D Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

No Preview Available !

NCE80H11D pdf
http://www.ncepower.com
Pb Free Product
NCE80H11D
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
TJ,TSTG
RθJC
-55 To 175
0.75
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
80 86
-
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
VDS=80V,VGS=0V
- - 1 μA
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
VDS=VGS,ID=250μA
VGS=10V, ID=40A
23
- 6.3
4
8
V
m
Forward Transconductance
gFS
VDS=25V,ID=40A
80 -
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 4900
- 410
-
-
PF
PF
Crss
- 315
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 20
-
nS
Turn-on Rise Time
Turn-Off Delay Time
tr
VDD=30V,ID=2A,RL=15,
-
19
td(off)
RG=2.5,VGS=10V
- 70
-
-
nS
nS
Turn-Off Fall Time
tf
- 30
-
nS
Total Gate Charge
Gate-Source Charge
Qg - 125
Qgs ID=30A,VDD=30V,VGS=10V -
24
-
-
nC
nC
Gate-Drain Charge
Qgd
- 49
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=40A
- - 1.2
V
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
IS
- - 105
A
trr
Tj=25,IF=75A,
- 37
nS
Qrr
di/dt=100A/uS (Note3)
- 58
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=40V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number NCE80H11D
Description NCE N-Channel Enhancement Mode Power MOSFET
Maker NCE Power
Total Page 7 Pages
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