NCE80H11D mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ)
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized Avalanche vol.
GENERAL FEATURES
* VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ)
Schematic diagram
* High density ce.
The NCE80H11D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
* VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ)
Schematic dia.
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