NCE80H11D Description
The NCE80H11D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
NCE80H11D Key Features
- VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ)
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
- Tape width