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NCE80H11H

Manufacturer: NCE Power Semiconductor

NCE80H11H datasheet by NCE Power Semiconductor.

NCE80H11H datasheet preview

NCE80H11H Datasheet Details

Part number	NCE80H11H
Datasheet	NCE80H11H-NCEPowerSemiconductor.pdf
File Size	323.47 KB
Manufacturer	NCE Power Semiconductor
Description	N-Channel Enhancement Mode Power MOSFET

NCE80H11H Overview

The NCE80H11H uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

NCE80H11H Key Features

VDS =80V,ID =105A RDS(ON) < 6.5mΩ @ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Automotive

NCE80H11 from other manufacturers

View NCE80H11 datasheet index

Brand Logo	Part Number	Description	Other Manufacturers
	NCE80H11	N-Channel Enhancement Mode Power MOSFET	NCE Power
	NCE80H11D	N-Channel Enhancement Mode Power MOSFET	NCE Power

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NCE80H11H Distributor