Datasheet Details
| Part number | NCE80H11H |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 323.47 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE80H11H Datasheet
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General Description
The NCE80H11H uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS =80V,ID =105A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.8mΩ).
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Good stability and uniformity with high EAS.
- Excellent package for good heat dissipation.
- Special process technology for high ESD capability Schematic diagram.