NCE80H11 Datasheet | NCE Power

http://.ncepower. Pb Free Product NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL Features - VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ) Schematic diagram - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Power switching application - Hard Switched and High Frequency Circuits -...