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NCE Power Semiconductor

NCE0130 Datasheet Preview

NCE0130 Datasheet

N-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCE0130
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0130 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS = 100V,ID =30A
RDS(ON) < 28m@ VGS=10V
(Typ:24 m)
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0130
NCE0130
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
ID (100)
Drain Current-Continuous(TC=100)
IDM Pulsed Drain Current
PD Maximum Power Dissipation
Derating factor
EAS Single pulse avalanche energy (Note 5)
TJ,TSTG
Operating Junction and Storage Temperature Range
Limit
100
±20
30
21
70
75
0.5
256
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Co., Ltd
Page 1
v1.0




NCE Power Semiconductor

NCE0130 Datasheet Preview

NCE0130 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE0130
Thermal Characteristic
RθJC
Thermal Resistance, Junction-to-Case (Note 2)
2.0 /W
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Condition
Min Typ Max Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
On Characteristics (Note 3)
VGS=0V ID=250μA
VDS=100V,VGS=0V
VGS=±20V,VDS=0V
100 110
--
--
-
1
±100
V
μA
nA
VGS(th)
Gate Threshold Voltage
RDS(ON)
Drain-Source On-State Resistance
gFS Forward Transconductance
Dynamic Characteristics (Note4)
VDS=VGS,ID=250μA
VGS=10V, ID=15A
VDS=5V,ID=10A
23
- 24
- 15
4
28
-
V
m
S
Clss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics (Note 4)
VDS=25V,VGS=0V,
F=1.0MHz
- 2000
- 300
- 250
-
-
-
PF
PF
PF
td(on)
Turn-on Delay Time
- 7 - nS
tr
Turn-on Rise Time
VDD=50V,RL=5
- 7 - nS
td(off)
Turn-Off Delay Time
VGS=10V,RGEN=3
- 29
-
nS
tf Turn-Off Fall Time
- 7 - nS
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=50V,ID=18A,
VGS=10V
- 39
-8
- 12
-
-
-
nC
nC
nC
Drain-Source Diode Characteristics
VSD Diode Forward Voltage (Note 3)
IS Diode Forward Current (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS=0V,IS=20A
-
TJ = 25°C, IF = 18A
di/dt = 100A/μs(Note3)
- - 1.2
- - 30
- 32
-
- 53
-
V
A
nS
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS Condition : Tj=25,VDD=50V,VG=10V,L=0.5mH,Rg=25, IAS=32A
Wuxi NCE Power Co., Ltd
Page 2
v1.0


Part Number NCE0130
Description N-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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