NCE0130 - N-Channel Enhancement Mode Power MOSFET

Description

The NCE0130 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 100V,ID =30A RDS(ON) < 28mΩ @ VGS=10V (Typ:24 mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Schematic diagram.

NCE Power Semiconductor

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Datasheet Details

Part number	NCE0130
Manufacturer	NCE Power Semiconductor
File Size	310.59 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0130 Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE0130 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0130 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Jun 2, 2018 |