NCE0130K mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 100V,ID =30A RDS(ON) < 28mΩ @ VGS=10V
(Typ:24mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson.
General Features
* VDS = 100V,ID =30A RDS(ON) < 28mΩ @ VGS=10V
(Typ:24mΩ)
* Special process technology for h.
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