NCE0213 mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS = 200V,ID =13A RDS(ON) <140mΩ @ VGS=10V
(Typ:123mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current.
General Features
* VDS = 200V,ID =13A RDS(ON) <140mΩ @ VGS=10V
(Typ:123mΩ)
* High density cell design for ul.
The NCE0213 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 200V,ID =13A RDS(ON) <140mΩ @ VGS=10V
(Typ:123mΩ)
* High d.
Image gallery
TAGS
Download (Size : 314.08KB)