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NCE Power Semiconductor

NCE0218D Datasheet Preview

NCE0218D Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCE0218D
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE0218D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
VDS =200V,ID =18A
RDS(ON) < 80m@ VGS=10V
(Typ:64m)
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-263-2L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE0218D
NCE0218D
TO-263-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
Limit
200
±20
18
13
72
150
250
-55 To 175
1
Unit
V
V
A
A
A
W
mJ
/W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0




NCE Power Semiconductor

NCE0218D Datasheet Preview

NCE0218D Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE0218D
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
200 220
-
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
VDS=200V,VGS=0V
- - 1 μA
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
VDS=VGS,ID=250μA
VGS=10V, ID=15A
23
- 64
4
80
V
m
Forward Transconductance
gFS
VDS=50V,ID=11A
25 -
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
4200
163
75
PF
PF
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 10
-
nS
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=100V,ID=15A
VGS=10V,RGEN=2.5
- 18
- 22
-
-
nS
nS
Turn-Off Fall Time
tf
- 5 - nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=100V,ID=15A,
VGS=10V
60
19
nC
nC
Qgd 17 nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=11A
- - 1.2
V
Diode Forward Current (Note 2)
IS
-
--
18
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF = 15A
- 90
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 300
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=100V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number NCE0218D
Description NCE N-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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