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NCE Power Semiconductor

NCE0218K Datasheet Preview

NCE0218K Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCE0218K
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE0218K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
VDS =200V,ID =18A
RDS(ON) < 80m@ VGS=10V
(Typ:65m)
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-252 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE0218K
NCE0218K
TO-252
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
ID (100)
IDM
PD
EAS
TJ,TSTG
Limit
200
±20
18
13
72
140
250
-55 To 175
Unit
V
V
A
A
A
W
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.2




NCE Power Semiconductor

NCE0218K Datasheet Preview

NCE0218K Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE0218K
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.07 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
200 220
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=200V,VGS=0V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1 1.5
2
V
Drain-Source On-State Resistance
Forward Transconductance
RDS(ON)
gFS
VGS=10V, ID=15A
VDS=50V,ID=11A
- 65
25 -
80
-
m
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
4200
163
75
PF
PF
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 10
-
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=100V,ID=15A
VGS=10V,RGEN=2.5
- 18
- 22
-5
-
-
-
nS
nS
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=100V,ID=15A,
VGS=10V
60
19
17
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=11A
- - 1.2
V
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
IS
-
--
18
A
trr
TJ = 25°C, IF = 15A
- 90
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 300
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=100V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.2


Part Number NCE0218K
Description NCE N-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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