NCE10G120 Datasheet Trench NPT IGBT

Manufacturer: NCE Power Semiconductor

NCE10G120 trench npt igbt by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE10G120
Manufacturer	NCE Power Semiconductor
File Size	286.66 KB
Description	Trench NPT IGBT
Datasheet	NCE10G120 Datasheet

General Description

Using advanced Trench NPT technology, NCE’s 1200V IGBTs offers superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness.

This device is designed for soft switching applications.

Absolute Maximum Ratings Pb Free Product NCE10G120 GCE C G E Symbol Description VCES VGES IC ICM(1) PD TJ Tstg Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current @TC=25°C @TC=100°C Maximum Power Dissipation @TC=25°C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.

Overview

http://www.ncepower.com NCE10G120 1200V, 10A, Trench NPT IGBT.

Key Features

z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=10A z High input impedance.

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