NCE1505S mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V
（Typ：31mΩ）
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current .
GENERAL FEATURES
* VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V
（Typ：31mΩ）
* High density cell design for ult.
The NCE1505S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
* VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V
（Typ：31mΩ）
* High d.
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