NCE1512I Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1512I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS = 150V,ID =12A RDS(ON) <160mΩ @ VGS=10V (Typ:130mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation S Schematic diagram Application - Power switching application - Hard switched and high frequency circuits Marking and pin assignment TO-251 top view Package Marking and Ordering Information Device...